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United States of America Patent

SERIAL NO

14313444

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Abstract

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A silicon device includes an active silicon layer, a buried oxide (BOX) layer beneath the active silicon layer and a high-resistivity silicon layer beneath the BOX layer. The device also includes a harmonic suppression layer at a boundary of the BOX layer and the high-resistivity silicon layer.

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES INCGRAND CAYMAN KY1-1104

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Botula, Alan B Essex Junction, US 52 639
Jaffe, Mark D Shelburne, US 146 2262
Joseph, Alvin J Williston, US 129 1208
Phelps, Richard A Colchester, US 59 625
Slinkman, James Montpelier, US 3 11
Wolf, Randy L Essex Junction, US 62 346

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