Semiconductor package
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United States of America Patent
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May 26, 2015
Issued Date -
N/A
app pub date -
Mar 7, 2014
filing date -
Apr 15, 2013
priority date (Note) -
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Abstract
A semiconductor package, wherein, in bonding of members constituting the semiconductor package, by using bonding layers containing 98 wt % or more of one metallic element such as silver having a melting point of 400° C. or higher, the bonding is performed in a temperature range where the occurrence of warpage or distortion of the members is suppressed, and after the bonding, a high melting point is obtained; and by configuring the members so that all the surfaces of the members which become bonding surfaces of bonding layers are parallel to each other, all the thickness directions of the bonding layers are aligned to be in the same direction, and during the formation of the bonding layers, the pressing direction is set to be one-way direction which is the direction of laminating the members.
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