Method of producing semiconductor substrate product, and etching method to be used therein

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United States of America Patent

PATENT NO 9159572
APP PUB NO 20140308819A1
SERIAL NO

14316327

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Abstract

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A method of producing a semiconductor substrate product, the method containing: a step of preparing an aqueous solution containing 7% by mass or more and 25% by mass or less of a quaternary alkyl ammonium hydroxide; a step of preparing a semiconductor substrate having a silicon film comprising a polycrystalline silicon film or an amorphous silicon film; and a step of heating the aqueous solution at 80° C. or higher and applying the resultant aqueous solution onto the semiconductor substrate to etch at least a part of the silicon film.

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Patent Owner(s)

  • FUJIFILM CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Enokido, Masashi Shizuoka, JP 5 58
Inaba, Tadashi Shizuoka, JP 75 517
Mizutani, Atsushi Shizuoka, JP 119 763

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