Ferromagnetic Material Sputtering Target
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United States of America Patent
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Issued Date -
Oct 23, 2014
app pub date -
Jan 21, 2013
filing date -
Jan 25, 2012
priority date (Note) -
Abandoned
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Abstract
Provided is a sputtering target which comprises a metal matrix phase comprising Co and Pt, Co and Cr, or Co, Cr and Pt; and an oxide phase at least containing Cr2O3, wherein Cr2O3 is contained in amount of 1 to 16 mol %. The sputtering target is characterized in that the total amount of alkali metals as impurities is 30 wt ppm or less. It becomes possible to inhibit the formation of spots originating from these impurities and detachment of magnetic thin films during or after film formation by sputtering. Accordingly, the magnetic thin film of a magnetic recording medium can be produced which has excellent durability.
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