Semiconductor device having insulation layer with concave portion and semiconductor layer formed over concave portion, electro-optical device, method of manufacturing semiconductor device, method of manufacturing electro-optical device, and electronic apparatus
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United States of America Patent
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Mar 29, 2016
Issued Date -
N/A
app pub date -
Apr 16, 2014
filing date -
Apr 18, 2013
priority date (Note) -
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Abstract
A lower insulation layer includes a concave portion that has a back surface on a first base member side, first to third surfaces which are opposed to the back surface, a fourth surface which is arranged between the first surface and the third surface, and a fifth surface which is arranged between the second surface and the third surface. A semiconductor layer is arranged on the first surface and the second surface. A gate electrode is arranged so as to be opposed to the semiconductor layer on at least the third surface, the fourth surface, and the fifth surface via a gate insulation layer.
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