Self-aligned borderless contacts using a photo-patternable dielectric material as a replacement contact
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United States of America Patent
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Jan 19, 2016
Grant Date -
Oct 23, 2014
app pub date -
Sep 16, 2013
filing date -
Apr 22, 2013
priority date (Note) -
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Abstract
A photo-patternable dielectric material is provided to a structure which includes a substrate having at least one gate structure. The photo-patternable dielectric material is then patterned forming a plurality of sacrificial contact structures adjacent the at least one gate structure. A planarized middle-of-the-line dielectric material is then provided in which an uppermost surface of each of the sacrificial contact structures is exposed. Each of the exposed sacrificial contact structures is then removed providing contact openings within the planarized middle-of-the-line dielectric material. A conductive metal-containing material is formed within each contact opening.
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