Self aligned embedded gate carbon transistors

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9087811
APP PUB NO 20140312413A1
SERIAL NO

13969013

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Abstract

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Transistors with self-aligned source/drain regions a gate structure embedded in a substrate; self-aligned source and drain contacts embedded in the substrate around the gate structure; and a channel layer over the gate structure and self-aligned source and drain contacts. The source and drain contacts extend above the channel layer.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Guo, Dechao Fishkill, US 268 2423
Han, Shu-Jen Cortlandt Manor, US 225 1507
Lu, Yu Hopewell Junction, US 350 8613
Wong, Keith Kwong Hon New York, US 241 2678

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