FinFET devices containing merged epitaxial Fin-containing contact regions
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 2, 2014
Issued Date -
N/A
app pub date -
Apr 18, 2013
filing date -
Apr 18, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A plurality of semiconductor fins are formed which extend from a semiconductor material portion that is present atop an insulator layer of a semiconductor-on-insulator substrate. A gate structure and adjacent gate spacers are formed that straddle each semiconductor fin. Portions of each semiconductor fin are left exposed. The exposed portions of the semiconductor fins are then merged by forming an epitaxial semiconductor material from an exposed semiconductor material portion that is not covered by the gate structure and gate spacers.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully