Method of processing substrate

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United States of America Patent

PATENT NO 9333750
APP PUB NO 20140315335A1
SERIAL NO

14256743

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of processing a substrate includes forming holes in bottom portions of a plurality of recesses formed in a substrate to be arranged in an array direction at a predetermined pitch by performing reactive ion etching on the bottom portions of the plurality of recesses. The forming holes in the bottom portions of the plurality of recesses is a process of preparing a substrate in which a dummy recess serving as a dummy is formed on at least one side of the array direction, in which the plurality of recesses that include the bottom portions in which the holes are formed are arranged, such that a recess is formed on both sides of a recess so that the plurality of recesses are formed at the predetermined pitch in the array direction and performing reactive ion etching on the bottom portions of the plurality of recesses of the prepared substrate.

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Patent Owner(s)

  • CANON KABUSHIKI KAISHA

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kato, Masataka Hiratsuka, JP 170 1883

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