Circuit for driving high-side transistor utilizing voltage boost circuits

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United States of America Patent

PATENT NO 9065437
APP PUB NO 20140320177A1
SERIAL NO

14257983

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A circuit for driving a transistor includes a drive circuit, a first voltage boost circuit and a second voltage boost circuit. The drive circuit has a first specific node, a second specific node, and a third specific node coupled to a control node of the transistor. The drive circuit is arranged for coupling the first specific node to the third specific node according to at least a voltage of the first specific node and a voltage of the second specific node in order to charge the control node. The first voltage boost circuit is coupled between the first specific node and a connection node of the transistor, and is arranged for boosting the voltage of the first specific node. The second voltage boost circuit is coupled between the first specific node and the second specific node, and is arranged for boosting the voltage of the second specific node.

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Patent Owner(s)

  • MEDIATEK SINGAPORE PTE. LTD.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tan, Wee Guan Singapore, SG 8 2
Yong, Siong Siew kl, MY 2 1

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