Intelligent gate driver for IGBT
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United States of America Patent
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May 16, 2017
Issued Date -
N/A
app pub date -
Nov 22, 2011
filing date -
Nov 22, 2011
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Abstract
A reverse-conducting insulated gate bipolar transistor, particularly a bi-mode insulated gate transistor, is controlled by responding to an ON command by applying high-level gate voltage for a first period, during which a current is fed into a connection point, from which it flows either through the RC-IGBT or along a different path. Based hereon, it is determined whether the RC-IGBT conducts in its forward/IGBT or reverse/diode mode, and the RC-IGBT is either driven at high or low gate voltage. Subsequent conduction mode changes may be monitored in the same way, and the gate voltage may be adjusted accordingly. A special turn-off procedure may be applied in response to an OFF command in cases where the RC-IGBT conducts in the reverse mode, wherein a high-level pulse is applied for a second period before the gate voltage goes down to turn-off level.
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- 15 United States
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Patent Owner(s)
- ABB SCHWEIZ AG;ABB TECHNOLOGY AG
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Hosini, Falah | Sundbyberg, SE | 18 | 197 |
Kopta, Arnost | Zürich, CH | 22 | 134 |
Mohan, Madhan | Tamil Nadu, IN | 1 | 7 |
Pamulapati, Siva Nagi Reddy | Andra Pradesh, IN | 1 | 7 |
Rahimo, Munaf | Uezwil, CH | 76 | 226 |
Schlapbach, Ulrich | Liebefeld, CH | 8 | 46 |
Schnell, Raffael | Seon, CH | 6 | 42 |
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