METHOD OF FORMING SIGMA-SHAPED TRENCH
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United States of America Patent
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Issued Date -
Oct 30, 2014
app pub date -
Nov 21, 2013
filing date -
Apr 28, 2013
priority date (Note) -
Abandoned
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Abstract
A method of forming a Σ-shaped trench is disclosed. The method includes: providing a silicon substrate; and sequentially performing a plasma etching process and a wet etching process on the silicon substrate to form a Σ-shaped trench therein. The plasma etching process includes: horizontally etching the silicon substrate using a first plasma etching gas including a nitrogen-containing fluoride; and vertically etching the silicon substrate using a second plasma etching gas including a polymer gas. A method of forming a semiconductor device is also disclosed.
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