METHOD FOR FABRICATING A METAL-INSULATOR-METAL (MIM) CAPACITOR HAVING CAPACITOR DIELECTRIC LAYER FORMED BY ATOMIC LAYER DEPOSITION (ALD)
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United States of America Patent
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app pub date -
Jul 16, 2014
filing date -
Jun 13, 2001
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Abandoned
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Abstract
In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO2, HfO2, (Zrx, Hf1-x)O2 (0
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