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Abstract

A semiconductor device includes a first insulating film formed on a memory cell region of the semiconductor substrate, a first polysilicon layer formed on the first insulating film, and memory cell transistors formed on the first polysilicon layer, each including a charge storage layer, an inter-electrode insulating film and a control gate electrode. The semiconductor device further includes a laminated structure formed on a peripheral circuit region of the semiconductor substrate that includes a second insulating film, a second polysilicon layer, a third insulating film, a third polysilicon layer, a fourth insulating film formed from the same material as a material of the inter-electrode insulating film, and a first electrode formed from the same material as a material of the control gate electrode. The third polysilicon layer, the fourth insulating film, and the first electrode are arranged in the peripheral circuit region to form a capacitance element.

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First Claim