Semiconductor device including FINFET structures with varied epitaxial regions, related method and design structure
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United States of America Patent
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Dec 23, 2014
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app pub date -
May 8, 2013
filing date -
May 8, 2013
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Abstract
A semiconductor device including a substrate; a FINFET disposed on the substrate, the FINFET including: a set of epitaxial regions disposed in a source/drain region on a set of fins, the set of epitaxial regions including: a first epitaxial region on a first inner surface of a first outer fin, the first epitaxial region having a first thickness defined as one of: a distance from the first inner surface to an edge of the epitaxial region in the case of a non-merged state of adjacent inner epitaxial regions of adjacent fins, and half of a distance from the first inner surface to an opposing inner surface of an adjacent fin in a merged state of adjacent inner epitaxial regions of adjacent fins, and a second epitaxial region with a second thickness disposed on a first outer surface of the first outer fin. The second thickness is thinner than the first thickness.
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