Interconnect structures containing nitrided metallic residues
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United States of America Patent
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Apr 14, 2015
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app pub date -
Sep 16, 2013
filing date -
May 10, 2013
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Abstract
A metal cap is formed on an exposed upper surface of a conductive structure that is embedded within an interconnect dielectric material. During the formation of the metal cap, metallic residues simultaneously form on an exposed upper surface of the interconnect dielectric material. A thermal nitridization process or plasma nitridation process is then performed which partially or completely converts the metallic residues into nitrided metallic residues. During the nitridization process, a surface region of the interconnect dielectric material and a surface region of the metal cap also become nitrided.
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