Magnetoresistive element with aluminum or iron concentration ratio changed in film-thickness direction
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United States of America Patent
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Feb 10, 2015
Grant Date -
Nov 13, 2014
app pub date -
Feb 28, 2014
filing date -
May 9, 2013
priority date (Note) -
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Abstract
A magnetoresistive element according to an embodiment includes: a magnetoresistance effect film including: a first and second magnetic films; and an intermediate film disposed between the first and second magnetic films, at least one of the first and second magnetic films being formed of a Heusler alloy expressed as Co100-x(AyB1.0-y)x (40 at %≦x≦60 at %, 0.3≦y≦0.7) where A is an alloy containing at least Fe and Mn, and B is an alloy containing at least Si, Al, and Ge, a composition of the at least one of the first and second magnetic films being changed in a film-thickness direction so that a ratio of Fe/(Fe+Mn) is less than 60% in a first region disposed near an interface with the intermediate film in the film-thickness direction, and is 60% or more in a second region that is disposed at more distance from the interface than the first region in the film-thickness direction.
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