ETCHED SILICON STRUCTURES, METHOD OF FORMING ETCHED SILICON STRUCTURES AND USES THEREOF
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United States of America Patent
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Issued Date -
Nov 13, 2014
app pub date -
Dec 21, 2012
filing date -
Dec 23, 2011
priority date (Note) -
Abandoned
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Abstract
A method of etching silicon, the method comprising the steps of: electrolessly depositing a first metal onto a silicon surface to be etched, wherein the electrolessly deposited first metal partially covers the surface of the silicon to be etched; depositing a second metal that is different from the first metal over the silicon surface and the electrolessly deposited first metal, wherein a film of the deposited second metal covers the silicon surface to be etched; removing the first metal and the second metal from regions of the film of the deposited second metal that overlie the first metal to leave the second metal partially covering the silicon surface to be etched; and etching the silicon by exposing the silicon surface to an aqueous etching composition comprising an oxidant and a source of fluoride ions.
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