Semiconductor device including finfet and diode having reduced defects in depletion region
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United States of America Patent
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Jun 16, 2015
Grant Date -
Nov 13, 2014
app pub date -
Jun 4, 2013
filing date -
May 7, 2013
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Abstract
A semiconductor device comprises a first substrate portion and a second substrate portion disposed a distance away from the first substrate portion. The first substrate portion includes a first active semiconductor layer defining at least one semiconductor fin and a first polycrystalline layer formed directly on the fin. The first polycrystalline layer is patterned to define at least one semiconductor gate. The second substrate portion includes a doped region interposed between a second active semiconductor region and an oxide layer. The oxide layer protects the second active semiconductor region and the doped region. The doped region includes a first doped area and a second doped area separated by the first doped region to define a depletion region.
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