Pulsed dielectric etch process for in-situ metal hard mask shape control to enable void-free metallization
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United States of America Patent
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Dec 9, 2014
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May 7, 2013
filing date -
May 7, 2013
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Abstract
An all-in-one trench-over-via etch wherein etching of a low-k material beneath a metal hard mask of titanium nitride containing material is carried out in alternating steps of (a) etching the low-k material while maintaining chuck temperature at about 45 to 80° C. and (b) metal hard mask rounding and Ti-based residues removal while maintaining chuck temperature at about 90 to 130° C.
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