ETCH bias homogenization

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United States of America Patent

PATENT NO 9263674
APP PUB NO 20140339493A1
SERIAL NO

14303652

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Abstract

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Methods and memory devices formed using etch bias homogenization are provided. One example method of forming a memory device using etch bias homogenization includes forming conductive material at respective levels over a substrate. Each respective level of conductive material is electrically coupled to corresponding circuitry on the substrate during patterning of the respective level of conductive material so that each respective level of conductive material has a homogenized etch bias during patterning thereof. Each respective level of conductive material electrically coupled to corresponding circuitry on the substrate is patterned.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Castro, Hernan A Shingle Springs, US 120 1179
Flores, Eddie T Folsom, US 2 89
Pellizzer, Fabio Cornate D'Adda, IT 313 3154

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