Non-volatile memory, writing method for the same, and reading method for the same
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United States of America Patent
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Aug 18, 2015
Grant Date -
Nov 20, 2014
app pub date -
Mar 18, 2014
filing date -
May 20, 2013
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Abstract
A non-volatile memory of an embodiment includes a plurality of memory cells, each of the memory cells including a plurality of transistors including a first to fourth transistors, a first non-volatile element, a second non-volatile element, a first node, and a second node, the first and second transistors being connected in series with the first non-volatile element, the third and fourth transistors being connected in series with the second non-volatile element, the first node being disposed between the first and second transistors, the second node being disposed between the third and fourth transistors, gates of the first and third transistors being connected to one of first wiring lines, a gate of the second transistor being connected to the second node, a gate of the fourth transistor being connected to the first node, the first transistor being connected between one of second wiring lines and the first node.
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