Integrated circuitry comprising transistors with broken up active regions
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United States of America Patent
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May 26, 2015
Grant Date -
Nov 20, 2014
app pub date -
May 17, 2013
filing date -
May 17, 2013
priority date (Note) -
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Abstract
Some embodiments include integrated circuits having first and second transistors. The first transistor is wider than the second transistor. The first and second transistors have first and second active regions, respectively. Dielectric features are associated with the first active region and break up the first active region. The second active region is not broken up to the same extent as the first active region. Some embodiments include methods of forming transistors. Active areas of first and second transistors are formed. The active area of the first transistor is wider than the active area of the second transistor. Dielectric features are formed in the active area of the first transistor. The active area of the first transistor is broken up to a different extent than the active area of the second transistor. The active areas of the first and second transistors are simultaneously doped.
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