Metal PVD-free conducting structures

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United States of America Patent

PATENT NO 8981564
SERIAL NO

13897956

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Abstract

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Structures and methods of forming the same are disclosed herein. In one embodiment, a structure can comprise a region having first and second oppositely facing surfaces. A barrier region can overlie the region. An alloy region can overlie the barrier region. The alloy region can include a first metal and one or more elements selected from the group consisting of silicon (Si), germanium (Ge), indium (Id), boron (B), arsenic (As), antimony (Sb), tellurium (Te), or cadmium (Cd).

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Patent Owner(s)

  • INVENSAS CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Caskey, Terrence Santa Cruz, US 43 940
Monadgemi, Pezhman Fremont, US 43 1085
Newman, Michael Dublin, US 67 1721
Uzoh, Cyprian Emeka San Jose, US 330 9133
Woychik, Charles G San Jose, US 106 2136

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