METHOD FOR PREPARING THE LOW TEMPERATURE POLY-SILICON FILM
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United States of America Patent
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Issued Date -
Nov 20, 2014
app pub date -
May 15, 2014
filing date -
May 16, 2013
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Abandoned
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Abstract
A method for preparing the low temperature ploy-silicon film, which includes the following steps: providing a substrate; forming an amorphous silicon layer on the substrate; forming a silicon oxide layer on the amorphous silicon layer by a plasma process; and performing a laser crystallizing process to the amorphous silicon layer. An embodiment of the present invention prepares the silicon oxide film in the low temperature ploy-silicon film by the plasma enhanced chemical vapor deposition process, which improves the overall uniformity of the silicon oxide film and owns a preferred roughness surface.
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