Methods of forming a pattern on a substrate
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United States of America Patent
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Mar 3, 2015
Grant Date -
Nov 20, 2014
app pub date -
May 14, 2013
filing date -
May 14, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
A method of forming a pattern on a substrate includes forming spaced first features derived from a first lithographic patterning step. Sidewall spacers are formed on opposing sides of the first features. After forming the sidewall spacers, spaced second features derived from a second lithographic patterning step are formed. At least some of individual of the second features are laterally between and laterally spaced from immediately adjacent of the first features in at least one straight-line vertical cross-section that passes through the first and second features. After the second lithographic patterning step, all of only some of the sidewall spacers in said at least one cross-section is removed.
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