DEVICE STRUCTURE SUITABLE FOR PARALLEL TEST

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United States of America Patent

APP PUB NO 20140346510A1
SERIAL NO

14083885

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Abstract

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A device structure suitable for parallel test is disclosed, which includes a main body and an anti-crosstalk structure. The main body includes a first well formed in a substrate, the first well defining a boundary of the main body in the substrate. The anti-crosstalk structure is a second well formed in the substrate and surrounding the first well of the main body. The second well has a conductivity type opposite to a conductivity type of the first well and has a depth greater than a depth of the first well. The present invention is capable of preventing the interference between leakage currents generated in bases of the same conductivity type of different such device structures during a parallel test, thereby allowing the leakage currents to be correctly measured and improving the reliability of measurement result and the test efficiency.

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Patent Owner(s)

Patent OwnerAddress
SHANGHAI HUALI MICROELECTRONICS CORPORATIONNO 6 LIANGTENG ROAD PUDONG NEW AREA SHANGHAI 201314

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yin, Binfeng Shanghai, CN 1 0
Zhao, Min Shanghai, CN 107 987
Zhou, Ke Shanghai, CN 190 1198

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