Electronic device with asymmetric gate strain

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United States of America Patent

PATENT NO 9356145
SERIAL NO

14456435

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Abstract

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The use of strained gate electrodes in integrated circuits results in a transistor having improved carrier mobility, improved drive characteristics, and reduced source drain junction leakage. The gate electrode strain can be obtained through non symmetric placement of stress inducing structures as part of the gate electrode.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Parekh, Kunal R Boise, US 290 2972
Sandhu, Gurtej S Boise, US 1216 32355

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