SILICON-ON-INSULATOR (SOI) BODY-CONTACT PASS GATE STRUCTURE
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United States of America Patent
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app pub date -
Aug 13, 2014
filing date -
Nov 3, 2010
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Abandoned
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Abstract
A circuit for testing a floating body field-effect transistor (FET), and a related method, are provided. Embodiments of this invention include a circuit including a contacted-body FET structure that can be operated in a floating body mode or a body-contacted mode, and a passgate FET. A body of the contacted-body FET structure is connected to the drain of the passgate FET. Voltage can be applied to the passgate FET to either allow or restrict current flow through the passgate FET, to operate the contacted-body FET structure in body contacted mode or floating body mode. Data can be taken in each mode and compared to extract a floating body voltage.
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