Nonvolatile semiconductor memory device with protective resistance film
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United States of America Patent
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May 26, 2015
Grant Date -
Nov 27, 2014
app pub date -
Sep 11, 2013
filing date -
May 21, 2013
priority date (Note) -
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Abstract
A nonvolatile semiconductor memory device according to an embodiment includes a memory cell block that includes a memory cell array, the memory cell array including: a plurality of first lines; a plurality of second lines intersecting the plurality of first lines; and a memory cell that is provided at each of intersections of the plurality of first lines and the plurality of second lines and includes a variable resistance element, the memory cell array further including a protective resistance film that is provided respectively at each of the intersections of the plurality of first lines and the plurality of second lines and that is connected in series with the memory cell and ohmically contacts the memory cell, and the protective resistance film being configured from a material having a resistivity of 1˜100 Ω·cm.
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