METHOD FOR FORMING DUAL STI STRUCTURE
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United States of America Patent
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Issued Date -
Nov 27, 2014
app pub date -
Oct 16, 2013
filing date -
May 23, 2013
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Abandoned
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Abstract
A method for forming dual shallow trench isolation (STI) structure, which includes a first etching process for forming a deep STI structure in a logic region using a hard mask layer as a mask and a second etching process for forming a shallow STI structure in a pixel region using a photoresist as a mask. Independence between these two etching processes can avoid the prior art problems of double slope profile of the sidewalls of the deep STI structure and a thickness inconsistency of the hard mask layer between on the pixel region and on the logic region.
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