Thermally optimized phase change memory cells and methods of fabricating the same

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United States of America Patent

PATENT NO 9153777
SERIAL NO

13908707

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Abstract

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A thermally optimized phase change memory cell includes a phase change material element disposed between first and second electrodes. The second electrode includes a thermally insulating region having a first thermal resistivity over the first electrode and a metallic contact region interposed between the phase change material element and the thermally insulating region, where the metallic contact layer has a second thermal resistivity lower than the first thermal resistivity.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Boniardi, Mattia Cormano, IT 38 115
Redaelli, Andrea Castatenovo, IT 153 1030

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