Wide band gap semiconductor wafers grown and processed in a microgravity environment and method of production
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United States of America Patent
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May 26, 2015
Grant Date -
Dec 4, 2014
app pub date -
May 29, 2013
filing date -
May 29, 2012
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Abstract
Wide band gap semiconductor wafers with previously unattainable characteristics and the method of processing and producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to process silicon carbide and other similar wide band gap semiconductors in a microgravity environment. The wafers are placed onto stackable containment systems that create an appropriate gap between each wafer to allow for homogeneous heating and processing. The resulting wide band gap semiconductors have unique molecular structures not attainable when wide band gap semiconductors with the identical chemical composition are produced in a standard 1 gravity environment.
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