Heterojunction light emitting diode
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United States of America Patent
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Feb 2, 2016
Grant Date -
Dec 4, 2014
app pub date -
May 30, 2013
filing date -
May 30, 2013
priority date (Note) -
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Abstract
A method for forming a light emitting device includes forming a monocrystalline III-V emissive layer on a monocrystalline substrate and forming a first doped layer on the emissive layer. A first contact is deposited on the first doped layer. The monocrystalline substrate is removed from the emissive layer by a mechanical process. A second doped layer is formed on the emissive layer on a side from which the substrate has been removed. The second doped layer has a dopant conductivity opposite that of the first doped layer. A second contact is deposited on the second doped layer.
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