METHODS FOR MAKING A SEMICONDUCTOR DEVICE WITH SHAPED SOURCE AND DRAIN RECESSES AND RELATED DEVICES
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United States of America Patent
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app pub date -
May 30, 2013
filing date -
May 30, 2013
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Abstract
A method for making a semiconductor device includes forming at least one gate stack on a layer comprising a first semiconductor material and etching source and drain recesses adjacent the at least one gate stack. The method further includes shaping the source and drain recesses to have a vertical side extending upwardly from a bottom to an inclined extension adjacent the at least one gate stack.
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