Lateral bipolar transistors having partially-depleted intrinsic base

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United States of America Patent

PATENT NO 9059195
APP PUB NO 20140353726A1
SERIAL NO

13904384

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A bipolar junction transistor (BJT) and method for fabricating such. The transistor includes an emitter region, a collector region, and an intrinsic-base region. The intrinsic-base region is positioned between the emitter region and the collector region. Furthermore, the physical separation between the emitter region and the collector region is less than the sum of a base-emitter space-charge region width and a base-collector space-charge region width at the transistor's standby mode.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cai, Jin Cortlandt Manor, US 131 1823
Ning, Tak H Yorktown Heights, US 251 3242
Shahidi, Ghavam G Pound Ridge, US 396 8125
Yau, Jeng-Bang Yorktown Heights, US 144 1332

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