MULTI-ORIENTATION SEMICONDUCTOR DEVICES EMPLOYING DIRECTED SELF-ASSEMBLY
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United States of America Patent
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Issued Date -
Dec 4, 2014
app pub date -
May 28, 2013
filing date -
May 28, 2013
priority date (Note) -
Abandoned
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Abstract
A template material layer is deposited over a substrate, and is patterned with at least two trenches having different lengthwise directions. An array of polymer lines are formed by directed self-assembly of a copolymer material and a selective removal of one type of polymer material relative to another type within each trench such that the lengthwise direction of the polymer lines are parallel to the lengthwise sidewalls of the trench. The patterns in the arrays of polymer lines are transferred into an underlying material layer to form arrays of patterned material structures. The arrays of patterned material structures may be arrays of semiconductor material portion, or may be arrays of gate electrodes. An array of patterned material structures may be at a non-orthogonal angle with respect to an array of underlying material portions or with respect to an array of overlying material portions to be subsequently formed.
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