Thermally assisted MRAM with a multilayer encapsulant for low thermal conductivity

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United States of America Patent

PATENT NO 9070868
APP PUB NO 20140353782A1
SERIAL NO

13909506

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A technique is provided for a thermally assisted magnetoresistive random access memory device. A magnetic tunnel junction is formed. Contact wiring having a top contact electrode and a bottom contact electrode is formed. The contact wiring provides write bias to heat the magnetic tunnel junction. A multilayer dielectric encapsulant is configured to retain the heat within the magnetic tunnel junction.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Annuziata, Anthony J Stamford, US 1 5
Gaidis, Michael C Wappingers Falls, US 66 762

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