Manganese oxide hard mask for etching dielectric materials
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United States of America Patent
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Sep 22, 2015
Grant Date -
Dec 4, 2014
app pub date -
May 30, 2013
filing date -
May 30, 2013
priority date (Note) -
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Abstract
A manganese oxide layer is deposited as a hard mask layer on substrate including at least a dielectric material layer. An optional silicon oxide layer may be formed over the manganese oxide layer. A patterned photoresist layer can be employed to etch the optional silicon oxide layer and the manganese oxide layer. An anisotropic etch process is employed to etch the dielectric material layer within the substrate. The dielectric material layer can include silicon oxide and/or silicon nitride, and the manganese oxide layer can be employed as an effective etch mask that minimizes hard mask erosion and widening of the etched trench. The manganese oxide layer may be employed as an etch mask for a substrate bonding process.
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