Three dimensional stacked nonvolatile semiconductor memory

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United States of America Patent

PATENT NO 9330761
APP PUB NO 20140355350A1
SERIAL NO

14460400

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Abstract

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A three dimensional stacked nonvolatile semiconductor memory according to an example of the present invention includes a memory cell array comprised of first and second blocks disposed side by side in a first direction, and a driver disposed on one end of the memory cell array in a second direction orthogonal to the first direction. First select gate lines in the first block and first select gate lines in the second block are connected to the driver after they are commonly connected in one end in the second direction of the memory cell array in a relation of one to one.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Maejima, Hiroshi Chigasaki, JP 234 4151

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