METHOD OF FORMING SIGMA-SHAPED TRENCH
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United States of America Patent
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Issued Date -
Dec 4, 2014
app pub date -
Nov 27, 2013
filing date -
Jun 3, 2013
priority date (Note) -
Abandoned
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Abstract
A method of forming a Σ-shaped trench is disclosed. The method includes: providing a silicon substrate; and performing a plasma etching process to form a Σ-shaped trench in the silicon substrate. The plasma etching process includes: etching the silicon substrate using a first plasma etching gas including a sulphur-containing fluoride; and etching the silicon substrate using a second plasma etching gas including a sulphur-containing fluoride and a polymer gas. A method of forming a semiconductor device is also disclosed.
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