METHODS OF CRYSTALLISING THIN FILMS
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United States of America Patent
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Issued Date -
Dec 4, 2014
app pub date -
Sep 6, 2012
filing date -
Sep 9, 2011
priority date (Note) -
Abandoned
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Abstract
A method of crystallising a thin film (220) including the steps of: depositing a thin film (220) on a substrate (210; and exposing the thin film (220) as deposited on the substrate (210) and the substrate (210) to a plasma for a time period of greater than 5 minutes, wherein: the thin film (220) is one of an amorphous magneto optic material, an amorphous electro optic material or a nitride material; a gas (130) is excited with a radio frequency (RF) field to form the plasma; the thin film (220) and the substrate (210) are, in the course of being exposed to the plasma, heated to temperatures of between 400° C. and 550° C. by the plasma; and the thin film (220) is at least partially crystallised by the plasma.
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