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Abstract

A method of improving the yield of semiconductor devices includes implanting ions into a NMOS gate. A layer of PEOX film is deposited upon the gate. A layer of LTO film is deposited upon the PEOX film. The method solves the problems of ions implanted on the NMOS gate diffusing to the structure of the PMOS gate due to the high temperature annealing process which impairs the electrical characteristic of the PMOS; the aggregation and precipitation of the ions to the surface of the gate due to the porosity of PEOX film, which impairs the active area of NMOS in the subsequent etching process; that the LTO film is easily influenced by the lower layer film and is affected by the speed of surface atom diffusion of the lower layer thereby avoiding differences in thickness of LTO film deposited on NMOS and PMOS.

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First Claim