CHAMBER WALL OF A PLASMA PROCESSING APPARATUS INCLUDING A FLOWING PROTECTIVE LIQUID LAYER
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United States of America Patent
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Issued Date -
Dec 4, 2014
app pub date -
Jun 4, 2013
filing date -
Jun 4, 2013
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Abstract
A semiconductor plasma processing apparatus includes a vacuum chamber in which semiconductor substrates are processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, and an RF energy source adapted to energize the process gas into the plasma state in the vacuum chamber. The apparatus can also include a chamber wall wherein the chamber wall includes a means for supplying a plasma compatible liquid to a plasma exposed surface thereof wherein the plasma compatible liquid flows over the plasma exposed surface thereby forming a flowing protective liquid layer thereon. A liquid supply delivers the plasma compatible liquid to the chamber wall.
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