MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20140363984A1
SERIAL NO

14285781

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Abstract

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A manufacturing method of a semiconductor device includes forming a first resist film above a substrate, placing a first photomask, that includes a first mask pattern, in a first position above the first resist film, transferring the first mask pattern to the first resist film to form a first resist pattern above the substrate, forming a second resist film above the substrate after forming the first resist pattern, placing the first photomask in a second position above the second resist film, and transferring the first mask pattern to the second resist film to form a second resist pattern above the substrate.

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Patent Owner(s)

Patent OwnerAddress
FUJITSU SEMICONDUCTOR LIMITED2-100-45 SHIN-YOKOHAMA KOHOKU-KU YOKOHAMA-SHI KANAGAWA 222-0033

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukuda, Masatoshi Akiruno, JP 70 1069

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