MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Dec 11, 2014
app pub date -
May 23, 2014
filing date -
Jun 10, 2013
priority date (Note) -
Abandoned
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Abstract
A manufacturing method of a semiconductor device includes forming a first resist film above a substrate, placing a first photomask, that includes a first mask pattern, in a first position above the first resist film, transferring the first mask pattern to the first resist film to form a first resist pattern above the substrate, forming a second resist film above the substrate after forming the first resist pattern, placing the first photomask in a second position above the second resist film, and transferring the first mask pattern to the second resist film to form a second resist pattern above the substrate.
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