EXTENDED GATE SENSOR FOR pH SENSING
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United States of America Patent
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Issued Date -
Dec 18, 2014
app pub date -
Jun 14, 2013
filing date -
Jun 14, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A sensing device includes a substrate having a source region and a drain region formed therein. A gate structure is formed over the substrate and includes a gate dielectric and a gate conductor. The gate conductor is formed on the gate dielectric and disposed between the source region and the drain region. A dielectric layer is formed over the substrate and has a depth configured to form a well over the gate conductor. A gate extension is formed in contact with or as part of the gate conductor and including a conductive material covering one or more surfaces of the well.
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