SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Dec 18, 2014
app pub date -
Aug 28, 2013
filing date -
Jun 14, 2013
priority date (Note) -
Abandoned
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Abstract
A semiconductor device according to the present embodiment includes a semiconductor substrate. An insulating film is provided on the semiconductor substrate. A gate electrode is provided on the insulating film. An SiOCN film covers side surfaces of the gate electrode. A silicon oxide film may be provided between the respective side surfaces of the gate electrode and the SiOCN film.
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