Semiconductor Devices Having Partially Oxidized Gate Electrodes
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United States of America Patent
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Issued Date -
Dec 18, 2014
app pub date -
Jun 3, 2014
filing date -
Jun 13, 2013
priority date (Note) -
Abandoned
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Abstract
Semiconductor devices are provided including a first trench in a semiconductor substrate; a first insulating film in the first trench; a first conductive film on the first insulating film, the first conductive film having upper and lower portions and filling at least a portion of the first trench; and a first work function adjustment film having first and second portions, a first lower work function adjustment film portion and a first upper work function adjustment portion. The first lower work function adjustment film portion overlaps the lower portion of the first conductive film and the first upper work function adjustment film portion overlaps the upper portion of the first conductive film between the first insulating film and the first conductive film.
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