Methods of forming different FinFET devices having different fin heights and an integrated circuit product containing such devices
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United States of America Patent
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Dec 27, 2016
Grant Date -
Dec 18, 2014
app pub date -
Jun 12, 2013
filing date -
Jun 12, 2013
priority date (Note) -
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Abstract
One illustrative method disclosed herein includes forming a plurality of trenches in a plurality of active regions of a substrate that defines at least a first plurality of fins and a second plurality of fins for first and second FinFET devices, respectively, forming liner materials adjacent to the first and second plurality of fins, wherein the liner materials adjacent the first fins and the second fins have a different thickness. The method also includes removing insulating material to expose portions of the liner materials, performing an etching process to remove portions of the liner materials so as to expose at least one fin in the first plurality of fins to a first height and at least one of the second plurality of fins to a second height that is different from the first height.
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